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Record #00365Technology archive

First Commercial High-NA EUV Lithography Installation

Intel completed the industry's first commercial high-NA EUV lithography installation at its Hillsboro, Oregon research site in 2024.

Verification status
VerifiedView verification details ↗
Last updated
2026-11-05
Category index
Technology

ARCHIVE VISUAL / 01

NOT TO SCALE

Achievement date

2024

2024-04

Achiever
Intel's first commercial High-NA EUV system
Location
Intel Fab D1X, Hillsboro, Oregon, USA · Oregon · United States
Record status
VerifiedView verification details ↗Report an issue
OverviewRecord historyRelated recordsSources

Overview

Archive Note

ASML's TWINSCAN EXE:5000 uses 0.55 numerical aperture, compared with 0.33 for the previous EUV platform.

Intel reported installation and calibration in April 2024; ASML reaffirmed the industry's first installation in September 2026.

Key information

Installation
April 2024
Model
TWINSCAN EXE:5000
NA
0.55
Installation fab
Intel Fab D1X, Hillsboro

Record history

1 Milestones
  1. 2024-04First achievementIntel's first commercial High-NA EUV systemIntel Fab D1X, Hillsboro, Oregon, USAFirst achievement

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Sources

Evidence & References

Verification basis and limitations

Verified

The record conclusion has sufficient verification support.

Basis: direct confirmation by an authority

Intel and ASML confirm the first commercial High-NA EUV installation in 2024.

Verification assessment
2026-11-05
Last editorial review
2026-11-05

Current Entry identifies the current entry in this archive; it does not establish that the record is still held today.

Source IDSourcePublisherLink
SRC-001Intel Corporation — Ronler Acres CampusOfficialENRecord topicOregon Department of Environmental QualitySRC-002With High NA EUV, Intel Foundry Opens New Frontier in ChipmakingOfficialENCurrent recordIntel NewsroomSRC-003Intel Foundry and ASML CollaborateOfficialENCurrent recordASML

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